Its thickness is proportional to voltage blocking capacity.
While the N- layer is called the drift region. The base P+ layer inject holes into N- layer that is why it is called injector layer. The emitter is directly attached to the N+ region while the gate is insulated using a silicon dioxide layer. The emitter and gate are metal electrodes. N+ regions are diffused over the P region as shown in the figure. The P region is designed in such a way to leave a path in the middle for the gate (G) electrode. Two P regions are fabricated on top of N- layer to form PN junction J2. An N- layer is placed on top of it to form PN junction J1. A P+ substrate is used for the construction of IGBT. The collector (C) electrode is attached to P layer while the emitter (E) is attached between the P and N layers. IGBT is made of four layers of semiconductor to form a PNPN structure. TRIAC – Construction, Working and Applications.DIAC – Construction, Working and Applications.Gate terminal as it is the input part, taken from MOSFET while the collector and emitter as they are the output, taken from the BJT. The terminal’s name also implies being taken from both transistors. It has three terminals Gate (G), Collector(C) and Emitter (E). It is a four-layer PNPN device having three PN junctions.
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